triquint semiconductor: www. triquint.com (972)994-8465 fax (972)994-8504 info-mmw@tqs.com 1 TGC4402 may 2007 ? rev a datasheet subject to change without notice. primary applications product description key features measured performance 17 ? 27 ghz upconverting mixer ? rf output frequency range: 17 - 27 ghz ? if input frequency range: 0.5 ? 3 ghz ? conversion loss: 9 db ? input toi: 18 dbm ? lo input power: 17 dbm ? bias: vg = -0.9 v ? technology: 3mi 0.25 um phemt ? chip dimensions: 1.930 x 1.030 x 0.100 mm ? point-to-point radio ? k band sat-com conversion loss vs frequency: vg= -0.9v, lo input @ 17 dbm, if = 2 ghz @ -5 dbm the triquint TGC4402 is an upconverting mixer mmic design using triquint?s proven 0.25 um 3mi phemt process. the TGC4402 is designed to support a variety of millimeter wave applications including point-to-point digital radio and k band sat-com. the TGC4402 provides -9 dbm nominal conversion loss across 17 ? 27 ghz . typical lo input drive is 17 dbm across the band. the input if frequency is 0.5 ? 3 ghz. the TGC4402 requires only 1 off-chip component. each device is 100% dc and rf tested on-wafer to ensure performance compliance. the device is available in chip form. the TGC4402 has a protective surface passivation layer providing environmental robustness. lead-free and rohs compliant itoi vs frequency: vg= -0.9v, lo input @ 17 dbm, if = 2 ghz @ -5 dbm 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 17 18 19 20 21 22 23 24 25 26 27 frequency (ghz) conversion loss (db) lsb usb 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 17 18 19 20 21 22 23 24 25 26 27 frequency (ghz) itoi (dbm) usb lsb
triquint semiconductor: www. triquint.com (972)994-8465 fax (972)994-8504 info-mmw@tqs.com 2 TGC4402 may 2007 ? rev a table ii recommended operating conditions table i absolute maximum ratings 1/ symbol parameter value notes vmxr gate supply voltage range -5 - 0 v pin lo input continuous wave power 25 dbm symbol parameter value vmxr gate voltage -0.9 v 1/ these ratings represent the maximum operable values for this device. stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device and / or affect device lifetime. these are stress ratings only, and functional operation of the device at these conditions is not implied. table iii rf characterization table bias: vg = -0.9 v, t a = 25 c + 5 c symbol parameter test conditions nominal units f out rf output frequency 17 - 26 ghz f if if input frequency 0.5 - 3 ghz f lo lo input frequency 14 - 28 ghz p lo lo input power f = 14 - 28 ghz 17 dbm conversion loss f = 17 - 26 ghz 9 db itoi input toi f = 17 - 26 ghz 18 dbm lo ? rf output isolation f = 17 - 26 ghz 35 db
triquint semiconductor: www. triquint.com (972)994-8465 fax (972)994-8504 info-mmw@tqs.com 3 TGC4402 may 2007 ? rev a table iv power dissipation and thermal properties 1/ for a median life, tm, of 1e+6 hours, power dissipation is limited to pd(max) = (tbd oc ? tbase oc)/ jc. 2/ channel operating temperature will directly affect the device median time to failure (mttf). for maximum life, it is recommended that channel temper atures be maintained at the lowest possible levels. parameter test conditions value notes maximum power dissipation tbaseplate = 70 oc pd = 0.45 w tchannel = 138 oc tm = 1.0e+6 hrs 1/ 2/ thermal resistance, jc lo input power is 17 dbm jc = 76 (oc/w) tchannel = 121 oc tm = >1e+6 hrs mounting temperature 30 seconds 320 oc max storage temperature -65 to 150 oc
triquint semiconductor: www. triquint.com (972)994-8465 fax (972)994-8504 info-mmw@tqs.com 4 TGC4402 may 2007 ? rev a 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 17 18 19 20 21 22 23 24 25 26 27 frequency (ghz) itoi (dbm) usb lsb measured data conversion loss vs frequency, lo input @ +17dbm if = 2 ghz @ -5 dbm itoi vs frequency, lo input @ +17dbm if = 2 ghz @ -5 dbm 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 17 18 19 20 21 22 23 24 25 26 27 frequency (ghz) conversion loss (db) lsb usb
triquint semiconductor: www. triquint.com (972)994-8465 fax (972)994-8504 info-mmw@tqs.com 5 TGC4402 may 2007 ? rev a measured data -40 -38 -36 -34 -32 -30 -28 -26 -24 -22 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 -1.5 -1.4 -1.3 -1.2 -1.1 -1 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 0 bias voltage (v) conversion loss (db) usb conversion vs bias, lo input @ +17dbm if = 2 ghz @ -5 dbm -40 -38 -36 -34 -32 -30 -28 -26 -24 -22 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 -1.5 -1.4 -1.3 -1.2 -1.1 -1 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 0 bias voltage (v) conversion loss (db) lsb conversion vs bias, lo input @ +17dbm if = 2 ghz @ -5 dbm
triquint semiconductor: www. triquint.com (972)994-8465 fax (972)994-8504 info-mmw@tqs.com 6 TGC4402 may 2007 ? rev a measured data -15 -14 -13 -12 -11 -10 -9 -8 -7 -6 -5 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 3.6 4 if frequency (ghz) conversion loss (db) lsb conversion vs if frequency, lo input @ +17dbm lo frequency @ 20 ghz -15 -14 -13 -12 -11 -10 -9 -8 -7 -6 -5 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 3.6 4 if frequenc y ( ghz ) conversion loss (db) usb conversion vs if frequency, lo input @ +17dbm lo frequency @ 20 ghz
triquint semiconductor: www. triquint.com (972)994-8465 fax (972)994-8504 info-mmw@tqs.com 7 TGC4402 may 2007 ? rev a isolation @ -0.9 v, lo input @ +17dbm if = 2 ghz @ -5 dbm measured data 25 30 35 40 45 17 18 19 20 21 22 23 24 25 26 27 lo frequency (ghz) isolation (db) 25 30 35 40 45 17 18 19 20 21 22 23 24 25 26 27 lo frequency (ghz) isolation (db) isolation @ -0.9 v, lo input @ +20dbm if = 2 ghz @ -5 dbm
triquint semiconductor: www. triquint.com (972)994-8465 fax (972)994-8504 info-mmw@tqs.com 8 TGC4402 may 2007 ? rev a gaas mmic devices are susceptible to damage from electrostatic discharge. pr oper precautions should be observed during handling, assembly and test. mechanical drawing 0.295 0.712 0.130 0.605 0.000 1.93 0.088 0.978 0.000 2 1 3 4 5 unit in mm thickness: 0.100 chip edge to bond pad dimension are shown to center of bond pad chip size tolerance: +/- 0.05 ground is backside of die bond pad #1 lo in 0.085 x 0.100 bond pad #2 vmxr 0.085 x 0.085 bond pad #3 if in 0.200 x 0.100 bond pad #4 rf out 0.100 x 0.200 bond pad #5 vmxr 0.085 x 0.085 1.030 0.088 1.840 0.934
triquint semiconductor: www. triquint.com (972)994-8465 fax (972)994-8504 info-mmw@tqs.com 9 TGC4402 may 2007 ? rev a gaas mmic devices are susceptible to damage from electrostatic discharge. pr oper precautions should be observed during handling, assembly and test. recommended assembly diagram rf out lo in if in 100 pf vmxr
triquint semiconductor: www. triquint.com (972)994-8465 fax (972)994-8504 info-mmw@tqs.com 10 TGC4402 may 2007 ? rev a gaas mmic devices are susceptible to damage from electrostatic discharge. pr oper precautions should be observed during handling, assembly and test. assembly notes ordering information part package style TGC4402 gaas mmic die component placement and adhesive attachment assembly notes: 1. vacuum pencils and/or vacuum collets are the preferred method of pick up. 2. air bridges must be avoided during placement. 3. the force impact is critical during auto placement. 4. organic attachment (i.e. epoxy) can be used in low-power applications. 5. curing should be done in a convection oven; proper exhaust is a safety concern. reflow process assembly notes: 1. use ausn (80/20) solder and limit exposure to temperatures above 300 c to 3-4 minutes, maximum. 2. an alloy station or conveyor furnace with reducing atmosphere should be used. 3. do not use any kind of flux. 4. coefficient of thermal expansion matching is critical for long-term reliability. 5. devices must be stored in a dry nitrogen atmosphere. interconnect process assembly notes: 1. thermosonic ball bonding is the preferred interconnect technique. 2. force, time, and ultrasonics are critical parameters. 3. aluminum wire should not be used. 4. devices with small pad sizes should be bonded with 0.0007-inch wire.
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